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參數資料
| 型號： | FDP5800 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 575K |
| 代理商： | FDP5800 |
F
FDP5800 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature vs. Temperature
Figure 8. On-Resistance Variation
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
1
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature
[
o
C
]
-80
-40
0
40
80
120
160
200
0.4
0.8
1.2
1.6
2.0
2.4
* Notes :
1. V
GS
= 10V
2. I
D
= 80A
r
D
,
D
T
J
, Junction Temperature
[
o
C
]
10
0
10
1
10
2
10
0
10
1
10
2
10
3
20
μ
s
100
μ
s
1ms
10ms
DC
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
25
50
75
100
125
CURRENT LIMITED
BY PACKAGE
I
D
,
T
C
, Case Temperature
[
o
C
]
10
-5
10
-4
10
t
1
, Square Wave Pulse Duration [sec]
-3
10
-2
10
-1
10
0
10
1
10
2
1E-3
0.01
0.1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θ
JC
(t) = 0.62
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
D = 0.5
Single pulse
Z
θ
J
(
t
1
P
DM
t
2
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