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參數資料
| 型號： | FDP5N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| 中文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 3/10頁 |
| 文件大小： | 270K |
| 代理商： | FDP5N50 |
F
FDP5N50 / FDPF5N50 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
Figure 2. Transfer Characteristics
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperature
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
1000
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
10
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
0.1
1
10
0.1
1
10
30
0.04
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,
V
DS
,Drain-Source Voltage[V]
4
5
6
7
8
0.1
1
10
-55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
0
3
6
9
12
1.0
1.5
2.0
2.5
*Note: T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
Ω
]
,
D
I
D
, Drain Current [A]
0.4
0.8
1.2
1.6
1
10
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
25
o
C
70
0.1
1
10
0
250
500
750
C
oss
C
iss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
30
0
4
8
12
0
2
4
6
8
*Note: I
D
= 5A
V
G
,
Q
g
, Total Gate Charge [nC]
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