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參數資料
| 型號： | FDP5N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| 中文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 270K |
| 代理商： | FDP5N50 |
F
FDP5N50 / FDPF5N50 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
- FDP5N50 - FDPF5N50
30
30
μ
s
Figure 11. Maximum Drain Current
vs. Case Temperature
6
-75
-25
T
J
, Junction Temperature
[
o
C
]
25
75
125
175
0.8
0.9
1.0
1.1
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
B
D
,
D
-75
-25
T
J
, Junction Temperature
[
o
C
]
25
75
125
175
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 2.5A
R
D
,
D
1
10
100
0.01
0.1
1
10
800
100
μ
s
1ms
10ms
I
D
,
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
1
10
100
0.01
0.1
1
10
800
30
μ
s
100
μ
s
1ms
10ms
I
D
,
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
30
25
50
T
C
, Case Temperature
[
o
C
]
75
100
125
150
0
1
2
3
4
5
I
D
,
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| FDP5N50_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FDP5N50F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55ヘ |
| FDP5N50F_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55?? |
| FDP5N50NZ | 功能描述:MOSFET N-Chan UniFET2 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP5N50NZF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 4.2A, 1.75?? |
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