- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375765 > FDP6676 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel Logic Level PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDP6676 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30V N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | FDP6676 |
FDP6676/FDB6676 Rev. C(W)
Typical Characteristics
0
30
60
90
120
150
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.5V
3.0V
2.5V
V
GS
= 10V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
30
60
90
120
150
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
4.0V
3.5V
4.5V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
=42 A
V
GS
= 10V
0.002
0.005
0.008
0.011
0.014
0.017
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 21 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB6690S | 30V N-Channel PowerTrench SyncFET |
| FDP6690 | 30V N-Channel PowerTrench SyncFET |
| FDP6690S | 30V N-Channel PowerTrench SyncFET |
| FDB7030BL | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場(chǎng)效應(yīng)管) |
| FDB7030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6690 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDP6690S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6N60ZU | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω |
| FDP6N60ZU_12 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2?? |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。