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參數資料
| 型號： | FDP8860 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 80 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 285K |
| 代理商： | FDP8860 |
F
M
FDP8860 Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 1mA, V
GS
= 0V
30
V
I
D
= 1mA, referenced to 25°C
22
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V,
V
GS
= 0V
V
GS
= ±20V
1
μ
A
T
J
= 150°C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.6
2.5
V
I
D
= 250
μ
A, referenced to 25°C
-9.6
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 80A
V
GS
= 5V, I
D
= 80A
V
GS
= 4.5V, I
D
= 80A
V
GS
= 10V, I
D
= 80A, T
J
= 150°C
V
DS
= 10V, I
D
= 80A
1.9
2.0
2.1
2.9
3.4
2.5
2.8
2.9
3.8
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
9200
1700
1060
1.7
12240
2260
1590
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 80A
V
GS
= 5V, R
GEN
= 3
35
135
64
59
158
81
27
33
56
216
103
95
222
114
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V
I
D
= 80A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 80A
V
GS
= 0V, I
S
= 40A
0.88
0.81
60
74
1.25
1.2
90
111
V
t
rr
Q
rr
Notes:
1:
Pulse Test: Pulse Width < 80
μ
s, Duty cycle < 0.5%.
2:
Starting T
J
=25
C, L= 0.3mH, I
AS
= 67A,V
DD
= 27V, V
GS
= 10V.
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 80A, di/dt = 100A/
μ
s
ns
nC
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