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參數資料
| 型號： | FDP8860 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 80 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 285K |
| 代理商： | FDP8860 |
F
M
FDP8860 Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
80
160
240
320
V
GS
=
4.5V
GS
=
4V
V
GS
=
4V
PULV
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3.5V
V
GS
=3V
V
GS
=
10V
I
D
,
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
80
160
240
320
0
1
2
3
4
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
V
GS
=
10V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-75 -50 -25
0
25
50
75 100 125 150 175
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
I
D
= 80A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
4
6
8
10
0
2
4
6
8
10
I
D
= 50A
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
4.0
0
40
80
120
160
V
DD
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= - 55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.3
0.6
0.9
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
300
Source to Drain Diode
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相關代理商/技術參數 |
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|---|---|
| FDP8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8870_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8870_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW |
| FDP8870_F085 | 功能描述:MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8874 | 功能描述:MOSFET 30V 114A 5.3 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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