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參數資料
| 型號： | FDPF2710T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 25 A, 250 V, 0.0425 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 503K |
| 代理商： | FDPF2710T |
2007 Fairchild Semiconductor Corporation
FDPF2710T Rev. A
1
www.fairchildsemi.com
F
September 2007
FDPF2710T
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
Ballast Application
Description
25A, 250V, R
DS(on)
= 36.3m
@V
GS
= 10 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handling capability
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220F
G
S
D
Symbol
Parameter
Ratings
Unit
V
DS
V
GS
I
D
Drain-Source Voltage
250
V
Gate-Source voltage
±
30
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
25
18.8
A
A
I
DM
Drain Current
(Note 1)
100
A
E
AS
dv/dt
Single Pulsed Avalanche Energy
(Note 2)
145
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
62.5
0.5
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min
Max
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
2.0
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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