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參數(shù)資料
| 型號： | FDPF39N20 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 1086K |
| 代理商： | FDPF39N20 |
2007 Fairchild Semiconductor Corporation
FDP39N20 / FDPF39N20 Rev. A
1
www.fairchildsemi.com
F
March 2007
UniFET
TM
FDP39N20 / FDPF39N20
200V N-Channel MOSFET
Features
39A, 200V, R
DS(on)
= 0.066
@V
GS
= 10 V
Low gate charge ( typical 38 nC)
Low C
rss
( typical 57 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP39N20
FDPF39N20
Unit
V
DSS
I
D
Drain-Source Voltage
200
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
39
23 4
39 *
23.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
156
156
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
860
mJ
Avalanche Current
(Note 1)
39
A
Repetitive Avalanche Energy
(Note 1)
25.1
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
251
2.0
59
0.48
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FDP39N20
FDPF39N20
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.5
2.1
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
-
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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