- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375780 > FDPF39N20 (FAIRCHILD SEMICONDUCTOR CORP) 200V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDPF39N20 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 1086K |
| 代理商： | FDPF39N20 |
3
www.fairchildsemi.com
FDP39N20 / FDPF39N20 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
0.04
0.06
0.08
0.10
0.12
0.14
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
Q
G
, Total Gate Charge [nC]
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 160V
V
DS
= 40V
Note : I
D
= 39A
V
G
,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDPF44N25 | 250V N-Channel MOSFET |
| FDPF44N25T | 250V N-Channel MOSFET |
| FDPF51N25 | FDPF51N25 |
| FDQ7238AS_NF40 | Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
| FDQ7238AS | Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDPF3N50NZ | 功能描述:MOSFET 500V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDPF44N25 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDPF44N25T | 功能描述:MOSFET 250V N-Chan MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDPF4N60NZ | 功能描述:MOSFET Dual 2A High-Speed Low-Side Gate Driver RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDPF51N25 | 功能描述:MOSFET 250V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。