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參數(shù)資料
| 型號： | FDPF7N50U |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 5 A, 500 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 968K |
| 代理商： | FDPF7N50U |
2007 Fairchild Semiconductor Corporation
FDP7N50U/FDPF7N50U REV. B
1
www.fairchildsemi.com
F
March 2007
UniFET
TM
FDP7N50U
/FDPF7N50U
500V N-Channel MOSFET
Features
5A, 500V, R
DS(on)
= 1.5
@V
GS
= 10 V
Low gate charge ( typical 12.8 nC)
Low C
rss
( typical 9 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
Symbol
Parameter
FDP7N50U
FDPF7N50U
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
5
3.0
5 *
3.0 *
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
20
20 *
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
5
A
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
89
0.71
39
0.31
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
300
°
C
Symbol
Parameter
FDP7N50U
FDPF7N50U
Unit
R
θ
JC
R
θ
CS
Thermal Resistance, Junction-to-Case
1.4
3.2
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDPF7N50U_G | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 500V 5A TO-220F |
| FDPF7N60NZ | 功能描述:MOSFET 600V NChannel MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDPF8N50NZ | 功能描述:MOSFET UniFET2 500V N-chan RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDPF8N50NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 8A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, UNITFET, 500V, 8A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):770mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V ;RoHS Compliant: No |
| FDPF8N50NZF | 功能描述:MOSFET 500V N-Channel UniFET-II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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