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參數(shù)資料
| 型號： | FDB8030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 358K |
| 代理商： | FDB8030L |
November 1999
1999 Fairchild Semiconductor Corporation
FDP8030L Rev C(W)
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
R
DS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
80 A, 30 V.
R
DS(ON)
= 0.0035
@ V
GS
= 10 V
R
DS(ON)
= 0.0045
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @# T
C
= 25
°
C
Ratings
30
±
20
80
300
187
1.25
-65 to +175
275
Units
V
V
A
(Note 1)
(Note 1)
W
Derate above 25
°
C
W
°
C
°
C
°
C
T
J
, T
STG
T
L
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
0.8
62.5
°
C/W
°
C/W
F
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