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參數資料
| 型號： | FDB8030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 358K |
| 代理商： | FDB8030L |
FDP8030L Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 20 V,
I
D
= 80 A
1500
mJ
80
A
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
1
1.5
2
V
Gate Threshold Voltage
–5
mV/
°
C
V
GS
= 10 V,
I
D
= 80 A
T
J
=125
°
C
I
D
= 70 A
V
DS
= 10 V
I
D
= 80 A
3.1
4.0
3.6
3.5
5.6
4.5
m
V
GS
= 4.5 V,
V
GS
= 10 V,
V
DS
= 10 V,
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
60
A
S
170
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
10500
2700
1650
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
D(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
D (off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
20
185
160
200
120
27
48
35
225
200
240
170
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 4.5 V,
R
GS
= 10
I
D
= 50 A,
R
GEN
= 10
V
DS
= 15 V,
I
D
= 80 A, V
GS
= 5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
(Note 1)
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
Drain–Source Diode Forward Voltage
80
300
A
A
(Note 1)
V
SD
V
GS
= 0 V,
I
S
= 80 A
(Note 1)
1
1.3
V
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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