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參數資料
| 型號： | FDQ7238S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench�� in SO-14 Package |
| 中文描述： | 11 A, 30 V, 0.0145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-14/11 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 244K |
| 代理商： | FDQ7238S |
FDQ7238S Rev A1 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V,
I
D
= 1 mA
I
D
= 250
μ
A
V
GS
= 0 V,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
V
BV
DSS
T
J
I
DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
26
25
mV/
°
C
μ
A
500
1
100
100
100
100
I
GSSF
Gate-Body Leakage, Forward
V
GS
= 16 V,
V
DS
= 0 V
nA
I
GSSR
Gate-Body Leakage, Reverse
V
GS
=
16 V,
V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 14 A
V
GS
= 4.5 V,
I
= 13 A
V
GS
= 10 V, I
D
= 14A, T
J
= 125
°
C
V
GS
= 10 V,
I
D
= 11 A
V
GS
= 4.5 V,
I
= 10 A
V
GS
= 10 V, I
D
= 11, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 14 A
V
DS
= 10 V,
I
D
= 11 A
I
D
= 1 mA
I
D
= 250
μ
A
Q2
Q1
Q2
Q1
Q2
Q1
1
1
1.4
1.4
3
5
7
8
11
11
12
16
3
3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
9.5
10.5
16
14.5
16
23
I
D(on)
On
–State Drain Current
Q2
Q1
Q2
Q1
50
50
A
S
g
FS
Forward Transconductance
67
48
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
2872
1906
522
311
186
134
1.5
0.8
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
R
G
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Gate Resistance
V
GS
= 15 mVf = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
14
11
13
13
51
28
18
15
48
33
6
4
8
4
25
20
23
23
82
45
32
27
67
46
nS
nS
nS
nS
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10V,
I
D
= 1 A,
R
GEN
= 6
Q2
V
DS
= 15 V, I
D
= 14A, V
GS
= 10 V
Q1
V
DS
= 15 V, I
D
= 11A,V
GS
= 10 V
F
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