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參數(shù)資料
型號: FDR4420A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single N-Channel, Logic Level, PowerTrenchTM MOSFET
中文描述: 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數(shù): 1/4頁
文件大小: 224K
代理商: FDR4420A
June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDR4420A
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Draint Current - Continuous
(Note 1a)
11
A
- Pulsed
40
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
FDR4420 Rev.D
11 A, 30 V. R
DS(ON)
= 0.009
@ V
GS
= 10 V,
R
DS(ON)
= 0.013
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1
5
6
7
8
4
3
2
D
S
D
D
S
D
D
G
SuperSOT -8
TM
pin
1
4420A
1998 Fairchild Semiconductor Corporation
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FDR4420A_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET
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