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參數資料
型號: FDR8305
廠商: Fairchild Semiconductor Corporation
英文描述: CAP CER 4.7UF 25V Y5V 1210
中文描述: 雙N溝道MOSFET的為2.5V指定的PowerTrench
文件頁數: 1/8頁
文件大小: 215K
代理商: FDR8305
F
FD8305N Rev. C
FDR8305N
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
November 1999
Features
4.5 A, 20 V. R
DS(ON)
= 0.022
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
@ V
GS
= 2.5 V.
Low gate charge (16.2nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
20
±
8
4.5
20
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
T
J
, T
stg
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
W
°
C
-55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
156
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
.8305
Device
FDR8305N
Reel Size
13
’’
Tape Width
12mm
Quantity
3000 units
D1
D2
D2
D1
G1
G2
S1
S2
SuperSOT -8
TM
1
5
7
8
6
4
3
2
相關PDF資料
PDF描述
FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDR8308P CAP CER 1500PF 630VDC U2J 1210
FDR8321L CAP CER 2200PF 630VDC U2J 1210
FDR836P P-Channel 2.5V Specified MOSFET
FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET
相關代理商/技術參數
參數描述
FDR8305N 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8308P 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8308P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
FDR8309P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8321L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application
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