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參數資料
| 型號： | FDR8305 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | CAP CER 4.7UF 25V Y5V 1210 |
| 中文描述： | 雙N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數： | 2/8頁 |
| 文件大小： | 215K |
| 代理商： | FDR8305 |
F
FD8305N Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to
25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
20
V
Breakdown Voltage Temperature
14
mV/
°
C
1
μ
A
nA
100
V
GS
= -8 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to
25
°
C
0.4
0.85
-3
1.5
V
Gate Threshold Voltage
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
=4.5 V, I
D
=4.5 A, T
J
=125
°
C
V
GS
= 2.5 V, I
D
= 4 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 4.5 V, I
D
= 4.5 A
0.015
0.026
0.020
0.022
0.040
0.028
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
A
S
24
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1600
380
200
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
12
15
35
18
16.2
2.5
5.5
22
27
55
30
23
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 4.5 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
0.67
1.2
A
V
V
GS
= 0 V, I
S
= 0.67 A
(Note
2)
0.65
Notes:
1. R
θ
JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC is guaranteed by design while R
θ
CA is determined by the user
’
s board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally.
156
O
C/W on a minimum mounting
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
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|---|---|
| FDR8305N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8308P | CAP CER 1500PF 630VDC U2J 1210 |
| FDR8321L | CAP CER 2200PF 630VDC U2J 1210 |
| FDR836P | P-Channel 2.5V Specified MOSFET |
| FDR838P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR8305N | 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8308P | 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
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