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參數資料
| 型號： | FDR8308P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 1500PF 630VDC U2J 1210 |
| 中文描述： | 3200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 268K |
| 代理商： | FDR8308P |
November 1998
FDR8308P
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDR8308P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
-20
V
Gate-Source Voltage
±8
V
Draint Current - Continuous
(Note 1)
-3.2
A
- Pulsed
-20
P
D
Maximum Power Dissipation
(Note 1)
0.8
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDR8308P Rev.C
-3.2 A, -20 V. R
DS(ON)
= 0.050
@ V
GS
= -4.5 V,
R
DS(ON)
= 0.070
@ V
GS
= -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-8 package: small footprint (40% less than
SO-8); low profile(1mmthick); maximum power
comparable to SO-8.
The SuperSOT-8 family of P-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These P-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been tailored to minimize the on-state resistance and yet
maintain superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
G1
D1
G2
S1
D2
D2
D1
S2
SuperSOT -8
TM
pin
1
8308P
1
5
7
8
2
6
3
4
1998 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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