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參數(shù)資料
| 型號(hào)： | FDR836P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel 2.5V Specified MOSFET |
| 中文描述： | 6100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 224K |
| 代理商： | FDR836P |
F
FDR836P, Rev. C
FDR836P
P-Channel 2.5V Specified MOSFET
General Description
SuperSOT
TM
-8 P-Channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to mini-
mize on-state resistance and provide superior switch-
ing performance. These devices are particularly suited
for low voltage applications such as battery powered
circuits or portable electronics where low in-line power
loss, fast switching and resistance to transients are
needed.
Features
-6.1 A, -20 V. R
DS(
ON
)
= 0.030
W
@ V
GS
= -4.5 V
R
DS(
ON)
= 0.040
W
@ V
GS
= -2.5 V
High density cell design for extremely low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
-20
±
8
-6.1
-18
1.8
1.0
0.9
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.
836P
Device
FDR836P
Reel Size
13
’’
Tape Width
12mm
Quantity
3000 units
1
5
6
7
8
4
3
2
D
S
D
D
S
D
G
SuperSOT -8
D
April 1999
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR840 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR840P | 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR842P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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