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參數資料
| 型號： | FDR8308P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 1500PF 630VDC U2J 1210 |
| 中文描述： | 3200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 268K |
| 代理商： | FDR8308P |
FDR8308P Rev.C
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
3
6
9
12
15
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -3.2A
-10V
Figure 7. Gate Charge Characteristics
.
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.05
0.5
5
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON) LIMIT
D
DC
1s
100ms
101ms
T = 25°C
V = -4.5V
SINGLE PULSE
R = 156°C/W
JA
100us
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
0.05
0.02
0.2
r
D = 0.5
0.1
0.01
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R =
156
°C/W
JA
T - T = P * R JA
P(pk)
2
JA
t
1
t
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
3
10
20
50
100
200
400
1000
2500
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R = 156°C/W
T = 25°C
JA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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