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參數資料
| 型號： | FDR6678A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 333K |
| 代理商： | FDR6678A |
April 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDR6678A Rev B(W)
FDR6678A
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“high side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
and fast switching in a small
package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
7.5 A, 30 V.
R
DS(ON)
= 24 m
@ V
GS
= 4.5V
R
DS(ON)
= 20 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
Fast switching, low gate charge
High power and current in a smaller footprint than
SO-8
D
S
D
D
S
D
G
SuperSOT -8
D
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
12
7.5
40
1.8
1.0
0.9
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.6678A
FDR6678A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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PDF描述 |
|---|---|
| FDR8305 | CAP CER 4.7UF 25V Y5V 1210 |
| FDR8305N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8308P | CAP CER 1500PF 630VDC U2J 1210 |
| FDR8321L | CAP CER 2200PF 630VDC U2J 1210 |
| FDR836P | P-Channel 2.5V Specified MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FD-R80 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDR8305 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8305N | 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8308P | 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
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