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參數資料
| 型號： | FDQ7698S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench |
| 中文描述： | 12 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-14/11 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 299K |
| 代理商： | FDQ7698S |
FDS7698S Rev C1 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V,
I
D
= 1 mA
I
D
= 1 mA
I
D
= 250
μ
A
V
GS
=
5 V,
V
GS
= 0 V,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
20
30
V
BV
DSS
T
J
I
DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
22
28
mV/
°
C
μ
A
500
10
100
100
100
100
I
GSSF
Gate-Body Leakage, Forward
V
GS
= 16 V,
V
DS
= 0 V
nA
I
GSSR
Gate-Body Leakage, Reverse
V
GS
=
16 V,
V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 15 A
V
GS
= 4.5 V,
I
= 14 A
V
GS
= 10 V, I
D
= 15 A, T
J
= 125
°
C
V
GS
= 10 V,
I
D
= 12 A
V
GS
= 4.5 V,
I
= 11 A
V
GS
= 10 V, I
D
= 12 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V
I
D
= 1 mA
I
D
= 250
μ
A
Q2
Q1
Q2
Q1
Q2
Q1
1.17
1
1.3
1.3
3
6
5.3
6
7.7
9.4
12.6
17
3
3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
7.5
9
12
12
16
21
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
50
50
A
S
g
FS
Forward Transconductance
V
DS
= 10 V,
V
DS
= 10 V,
I
D
= 15 A
I
D
= 12 A
80
38
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
4814
1324
842
300
321
98
1.5
1.2
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
R
G
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Gate Resistance
V
GS
= 15 mVf = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
16
10
14
12
90
28
32
11
43
12
8.5
3.6
11
3.7
29
20
25
22
144
45
51
20
60
17
nS
nS
nS
nS
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10V,
I
D
= 1 A,
R
GEN
= 6
Q2
V
DS
= 15 V, I
D
= 15 A, V
GS
= 5 V
Q1
V
DS
= 15 V, I
D
= 12 A,V
GS
= 5 V
F
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