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參數(shù)資料
| 型號： | FDR8702H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFET |
| 中文描述： | 3600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 200K |
| 代理商： | FDR8702H |
FDR8702H Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250 μA
I
D
= –250 μA
Q1
Q2
20
–20
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 μA, Ref to 25°C
I
D
= –250 μA, Ref to 25°C
Q1
Q2
36
–15
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 16 V,
V
DS
= – 16 V, V
GS
= 0 V
V
GS
= 0 V
Q1
Q2
1
–1
μA
I
GSS
Gate-Body Leakage
V
GS
= ±12 V, V
DS
= 0 V
V
GS
= ±8 V,
V
DS
= 0 V
Q1
Q2
±100
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250 μA
I
D
= –250 μA
Q1
Q2
0.6
–0.4
0.8
–0.7
1.5
–1.6
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, Ref to 25°C
I
D
= –250 μA, Ref to 25°C
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
=4.5V,I
D
=3.6A,T
J
=125°C
V
GS
= –4.5V, I
D
= –2.6A
V
GS
= –2.5V, I
D
= –2.2A
V
GS
=–4.5V,I
D
=–2.6A,T
J
=125°C
V
GS
= 4.5 V,
V
GS
= –4.5V,
V
DS
= V
GS
,
V
DS
= V
GS
,
Q1
Q2
–2
2.5
31
42
41
66
85
83
mV/°C
R
DS(on)
Static Drain-Source
On-Resistance
Q1
38
54
58
80
110
108
m
R
DS(on)
Static Drain-Source
On-Resistance
Q2
m
I
D(on)
On–State Drain Current
V
DS
= 5 V
V
DS
= –5 V
I
D
= 250 μA
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
Q2
10
–10
A
g
FS
Forward Transconductance
15
9
1
4.8
S
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
650
607
170
165
80
60
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
For Q1:
V
DS
=10V, V
GS
=0V, f=1MHz
For Q2:
V
DS
= –10V, V
GS
=0V, f=1MHz
pF
Switching Characteristics
(Note 2)
td(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
12
9
11
16
26
7
8
7
6
1.3
1.2
16
22
18
20
29
42
14
16
10
8
ns
tr
Turn-On Rise Time
ns
td(off)
Turn-Off Delay Time
ns
tf
Turn-Off Fall Time
For Q1:
V
DS
= 10V,
V
GS
= 4.5 V,
For Q2:
V
DS
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= 1 A,
R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
For Q1:
V
DS
= 10 V,
V
GS
= 4.5 V
For Q2:
V
DS
= –10 V, I
D
= –2.6 A,
V
GS
= –4.5 V
I
D
= 3.6 A,
Q1
Q2
2.2
1.6
nC
F
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