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參數資料
| 型號： | FDR8702H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFET |
| 中文描述： | 3600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 200K |
| 代理商： | FDR8702H |
FDR8702H Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max Units
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.7
–0.7
1.2
–1.2
A
V
V
SD
V
GS
= 0 V, I
S
= 0.7A, Note 2
V
GS
= 0 V, I
S
= –0.7A, Note 2
0.7
–0.7
16
22
0.6
0.7
5
8
t
rr
Reverse Recovery Time
ns
I
rm
Maximum Reverse Recovery
Current
A
Q
rr
Reverse Recovery Charge
For Q1:
IF = 3.6A, dIF/dt = 100A/μs
For Q2:
IF = –2.6A, dIF/dt = 100A/μs
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
76°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
146°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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