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參數資料
| 型號： | FDS2572 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET |
| 中文描述： | 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數： | 10/12頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDS2572 |
2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
F
SPICE Thermal Model
REV August 2001
FDS2572
Copper Area = 1 in
2
CTHERM1 TH 8 2.0e-3
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 1.0e-2
CTHERM4 6 5 4.0e-2
CTHERM5 5 4 9.0e-2
CTHERM6 4 3 2.0e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3
RTHERM1 TH 8 1.0e-1
RTHERM2 8 7 5.0e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
SABER Thermal Model
Copper Area = 1 in
2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 =2.0e-3
ctherm.ctherm2 c2 c3 =5.0e-3
ctherm.ctherm3 c3 c4 =1.0e-2
ctherm.ctherm4 c4 c5 =4.0e-2
ctherm.ctherm5 c5 c6 =9.0e-2
ctherm.ctherm6 c6 c7 =2.0e-1
ctherm.ctherm7 c7 c8 =1
ctherm.ctherm8 c8 tl =3
rtherm.rtherm1 th c2 =1.0e-1
rtherm.rtherm2 c2 c3 =5.0e-1
rtherm.rtherm3 c3 c4 =1
rtherm.rtherm4 c4 c5 =5
rtherm.rtherm5 c5 c6 =8
rtherm.rtherm6 c6 c7 =12
rtherm.rtherm7 c7 c8 =18
rtherm.rtherm8 c8 tl =25
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
CASE
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
TABLE 1. THERMAL MODELS
COMPONANT
0.04 in
2
0.28 in
2
0.52 in
2
0.76 in
2
1.0 in
2
CTHERM6
1.2e-1
1.5e-1
2.0e-1
2.0e-1
2.0e-1
CTHERM7
0.5
1.0
1.0
1.0
1.0
CTHERM8
1.3
2.8
3.0
3.0
3.0
RTHERM6
26
20
15
13
12
RTHERM7
39
24
21
19
18
RTHERM8
55
38.7
31.3
29.7
25
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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