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參數資料
| 型號： | FDS4435A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrench⑩MOSFET |
| 中文描述： | 9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 637K |
| 代理商： | FDS4435A |
F
FDS4435 Rev. D
FDS4435
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
June 1999
Features
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Low gate charge (17nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
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| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDS4470 | 40V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS4435A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS4435BZ | 功能描述:MOSFET 30V.PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4435BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 8.8A, SOIC |
| FDS4435BZ_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ |
| FDS4435BZ_F021 | 制造商:Fairchild Semiconductor Corporation 功能描述:FDS4435BZ Series -30 V -8.8 A P-Channel PowerTrench MOSFET - SOIC-8 |
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