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參數資料
| 型號： | FDS4885C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 40 V, 0.022 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 254K |
| 代理商： | FDS4885C |
FDS4885C Rev D(W)
Typical Characteristics: Q2 (P-Channel)
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-6.0V
-4.0V
-4.5V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
5
10
15
20
25
30
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= - 3.0V
-3.5V
-6.0V
-4.5V
-4.0V
-10V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
R
D
,
I
D
= -6A
V
GS
= - 10V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
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|---|---|
| FDS4895C | 功能描述:MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4897AC | 功能描述:MOSFET 40V Dual N & P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4897C | 功能描述:MOSFET 40V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4935 | 功能描述:MOSFET 30V P-CH DUAL PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4935A | 功能描述:MOSFET -30V Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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