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參數(shù)資料
| 型號(hào)： | FDS4897C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 6200 mA, 40 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 164K |
| 代理商： | FDS4897C |
November 2005
2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
www.fairchildsemi.com
FDS4897C
Dual
N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Inverter
Power Supplies
Features
Q1
:
N-Channel
6.2A, 40V
R
DS(on)
= 29m
Ω
@ V
GS
= 10V
R
DS(on)
= 36m
Ω
@ V
GS
= 4.5V
Q2
:
P-Channel
–4.4A, –40V R
DS(on)
= 46m
Ω
@ V
GS
= –10V
R
DS(on)
= 63m
Ω
@ V
GS
= –4.5V
High power handling capability in a widely used
surface mount package
RoHS compliant
S
D
SO-8
D
D
D
G
D1
D1
D2
D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
40
±
20
6.2
20
40
±
20
–4.4
–20
V
V
A
W
(Note 1a)
- Pulsed
2
1.6
1
0.9
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS4897C
FDS4897C
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
M
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