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參數資料
| 型號： | FDS6670AS_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 13500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 114K |
| 代理商： | FDS6670AS_NL |
FDS6670AS Rev A (X)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V, I
D
= 1 mA
30
V
I
D
= 1 mA, Referenced to 25
°
C
31
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
500
±
100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=13.5A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
1
1.7
3
V
–3.3
mV/
°
C
I
D
= 13.5 A
I
D
= 11.2 A
7.5
9
10
9
11.5
12.5
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 13.5 A
50
A
S
66
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Gate Resistance
1540
440
160
2.1
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d
(
off
)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d
(
off
)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge at Vgs=10V
Q
g
Total Gate Charge at Vgs=5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
5
27
18
13
15
24
13
27
16
4.2
5.1
20
10
44
32
23
27
38
23
38
22
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V, I
D
= 13.5 A,
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6670S | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6672 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS6672A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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