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參數(shù)資料
| 型號(hào)： | FDS6670S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 13500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 95K |
| 代理商： | FDS6670S |
August 2001
2001 Fairchild Semiconductor Corporation
FDS6670S Rev E (W)
FDS6670S
30V N
-
Channel PowerTrench
ò
SyncFET
General Description
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6670S includes
an
integrated
Schottky
monolithic SyncFET technology.
diode
using
Fairchild’s
Applications
DC/DC converter
Motor drives
Features
13.5 A, 30 V.
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (24nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
Units
V
±
20
13.5
50
2.5
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
1.2
1
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6670S
FDS6670S
13’’
12mm
2500 units
F
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| FDS6672 | 30V N-Channel PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6672 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS6672A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6672A_01 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
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