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參數資料
| 型號： | FDS6675A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 107K |
| 代理商： | FDS6675A |
February 2003
2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)
FDS6675A
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–11 A, –30 V
R
DS(ON)
= 13 m
@ V
GS
= –10 V
R
DS(ON)
= 19 m
@ V
GS
= –4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–30
±
25
–11
–50
2.5
1.2
1
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6675A
FDS6675A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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PDF描述 |
|---|---|
| FDS6675 | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6676AS | 30V N-Channel PowerTrench SyncFET |
| FDS6676 | 30V N-Channel PowerTrench MOSFET |
| FDS6676S | 30V N-Channel PowerTrench? SyncFET |
| FDS6678A | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6675BZ | 功能描述:MOSFET -30V P-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6675BZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET |
| FDS6676 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6676 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6676AS | 功能描述:MOSFET 30V NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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