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參數資料
| 型號： | FDS6675A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 107K |
| 代理商： | FDS6675A |
FDS6675A Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= –250
μ
A
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–23
mV/
°
C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= ±25 V,
–10
±100 nA
μ
A
V
DS
= 0 V
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V,
I
D
= –11 A
V
GS
= –4.5 V,
I
D
= –9 A
V
GS
= –10 V, I
D
= –11 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –11 A
–1
–1.6
–3
V
Gate Threshold Voltage
5
mV/
°
C
10
15
14
34
13
19
18
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Rg
Gate Resistance
On–State Drain Current
Forward Transconductance
–50
A
S
2330
610
300
4
pF
pF
pF
m
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
=15 mV f= 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
14
12
70
37
24
6
9
25
22
110
60
34
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15 V,
V
GS
= –5 V
I
D
= –11 A,
–2.1
–1.2
A
V
ns
nC
V
GS
= 0 V,
I
F
= –11A
d
iF
/d
t
= 100A/
μ
s
I
S
= –2.1 A
(Note 2)
–0.7
33
15
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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