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參數(shù)資料
| 型號(hào)： | FDS6670AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 13500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 114K |
| 代理商： | FDS6670AS |
FDS6670AS Rev A (X)
Typical Characteristics
0
10
20
30
40
50
0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
2.5V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
6.0V
10V
4.0V
4.5V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
25
50
75
100
125
T
J
,0
o
C)
R
D
,
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 6.75A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.1
0.3
0.4
0.5
0.6
V
SD
, BOD0.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6670AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6670AS_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFETa?￠ |
| FDS6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6670S | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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