欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): FDS6676AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 2/8頁
文件大小: 542K
代理商: FDS6676AS
2
www.fairchildsemi.com
FDS6676AS Rev. A (X)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 1 mA, Referenced to 25
= 0 V, I
D
= 1 mA
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
°
C
28
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 1 mA, Referenced to 25
= V
GS
, I
D
= 1 mA
1
1.5
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
°
C
–3.3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
V
GS
V
DS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
= 14.5 A
= 13.2 A
= 14.5A, T
J
= 125
°
C
4.9
5.9
6.7
6.0
7.25
8.5
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
= 10 V, V
DS
= 14.5 A
= 5 V
50
A
Forward Transconductance
= 10 V, I
D
66
S
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
2510
pF
C
oss
Output Capacitance
710
pF
C
rss
Reverse Transfer Capacitance
270
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
10
20
ns
t
r
Turn–On Rise Time
12
22
ns
t
d(off)
Turn–Off Delay Time
43
69
ns
t
f
Turn–Off Fall Time
29
46
ns
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 4.5 V, R
D
= 1 A,
GEN
= 6
17
31
ns
t
r
Turn–On Rise Time
22
35
ns
t
d(off)
Turn–Off Delay Time
34
54
ns
t
f
Turn–Off Fall Time
29
46
ns
Q
g(TOT)
Total Gate Charge at Vgs=10V
V
DD
= 15 V, I
D
= 14.5 A,
45
63
nC
Q
g
Total Gate Charge at Vgs=5V
25
35
nC
Q
gs
Gate–Source Charge
7
nC
Q
gd
Gate–Drain Charge
8
nC
相關(guān)PDF資料
PDF描述
FDS6676 30V N-Channel PowerTrench MOSFET
FDS6676S 30V N-Channel PowerTrench? SyncFET
FDS6678A 30V N-Channel PowerTrench MOSFET
FDS6679Z 30 Volt P-Channel PowerTrench MOSFET
FDS6679 30 Volt P-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6676AS_0511 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676AS_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6676AS_G 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET
FDS6676AS_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET
FDS6676S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 买车| 阿拉尔市| 墨玉县| 三河市| 原阳县| 和静县| 娱乐| 古浪县| 互助| 平昌县| 夏邑县| 绥化市| 通州区| 阳江市| 门头沟区| 巴青县| 南丰县| 香港 | 鲜城| 营口市| 中卫市| 灌云县| 旬阳县| 宁津县| 珲春市| 菏泽市| 贵州省| 青海省| 镇江市| 商河县| 乡城县| 彩票| 台北市| 泾源县| 板桥市| 姚安县| 定边县| 恩施市| 灌南县| 贵定县| 桐城市|