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參數(shù)資料
| 型號： | FDS6676AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 542K |
| 代理商： | FDS6676AS |
6
www.fairchildsemi.com
FDS6676AS Rev. A (X)
F
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recov-
ery characteristics of the body diode of an equivalent size MOS-
FET produced without SyncFET (FDS6676).
Figure 13. Non-SyncFET (FDS6676) body diode
reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
0
10nS/DIV
0
10nS/DIV
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T = 125
°
T
A
= 25
°
T
A
= 100
°
C
C
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6676AS_0511 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET |
| FDS6676AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6676AS_G | 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6676AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET |
| FDS6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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