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參數(shù)資料
| 型號： | FDS6680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| 中文描述： | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 551K |
| 代理商： | FDS6680 |
March 2005
FDS6680AS
30V N
-
Channel PowerTrench
SyncFET
General Description
2005 Fairchild Semiconductor Corporation
FDS6680AS Rev B(X)
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
Applications
DC/DC converter
Low side notebooks
Features
11.5 A, 30 V. R
DS(ON)
max= 10.0 m
@ V
GS
= 10 V
R
DS(ON)
max= 12.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
11.5
50
2.5
1.2
1
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS6680AS
FDS6680AS
FDS6680AS
FDS6680AS_NL (Note 4)
Device
Reel Size
13’’
13’’
Tape width
12mm
12mm
Quantity
2500 units
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6680A | Single N-Channel, Logic Level, PowerTrench MOSFET |
| FDS6680S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDS6681Z | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6682 | 30V N-Channel PowerTrench MOSFET |
| FDS6685 | P-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680_L99Z | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS66805 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6680A | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680A_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench?? MOSFET |
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