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參數資料
| 型號： | FDS6900S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Ch PowerTrench SyncFet⑩ |
| 中文描述： | 6.9 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 6/9頁 |
| 文件大小： | 154K |
| 代理商： | FDS6900S |
FDS6900S Rev C (W)
Typical Characteristics Q1
0
10
20
30
40
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
6.0V
3.0V
3.5V
4.5V
2.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
4.5V
6.0V
4.0V
10V
3.5V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 6.9A
V
GS
= 10V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
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| FDS6910 | 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6911_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m?? |
| FDS6912 | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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