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參數資料
| 型號： | FDS6961AZ |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 30V的五（巴西）直| 3.5AI（四）|蘇 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | FDS6961AZ |
September 2001
FDS6961AZ
Dual N-Channel Logic Level PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS6961AZ Rev C (W)
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
advanced
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
3.5 A, 30 V.
R
DS(ON)
= 90 m
@ V
GS
= 10 V
R
DS(ON)
= 140 m
@ V
GS
= 4.5 V
Low gate charge (2.1 nC typical)
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
4
5
3
6
2
7
1
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
30
±
20
3.5
14
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6961AZ
FDS6961AZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6975 | 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6975 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6982 | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6982 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982_L86Z | 功能描述:MOSFET SO-8 N-CH 1&2 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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