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參數(shù)資料
| 型號： | FDS8433 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single P-Channel 2.5V Specified MOSFET |
| 中文描述： | 單P溝道MOSFET的2.5V的指定 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 196K |
| 代理商： | FDS8433 |
F
FDS8433A Rev. B1
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
3000
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C s
f = 1 MHz
V = 0 V
C ss
C s
0
4
8
12
16
20
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
-15V
I =-5.0A
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.1
1
10
100
-
D
RDS(ON) LIMIT
V = -4.5V
SINGLE PULSE
R = 125°C/W
T = 25°C
JA
GS
DC
1s
10s
100ms
10ms
1ms
100us
0
0.01
0.1
1
10
100
300
10
20
30
40
50
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =125°C/W
T = 25°C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
R (t) = r(t) * R
R =
125
°C/W
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| FDS8433A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS8433A_00 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified MOSFET |
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