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參數(shù)資料
型號(hào): FDS8870_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 18 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SO-8
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 259K
代理商: FDS8870_NL
F
FDS8870 Rev. A3
www.fairchildsemi.com
4
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
5
10
15
20
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
R
θ
JA
=50
o
C/W
V
GS
= 10V
V
GS
= 4.5V
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
R
θ
JA
=50
o
C/W
10
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2000
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
V
GS
= 10V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
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