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參數(shù)資料
| 型號(hào)： | FDS8896 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel PowerTrench?? MOSFET |
| 中文描述： | 15 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 260K |
| 代理商： | FDS8896 |
F
M
FDS8896 Rev. A1
www.fairchildsemi.com
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 19.8A, V
= 30V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
JA
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
FDS8896_NL is lead free product. FDS8896_NL marking will appear on the reel label.
V
DD
= 15V, I
D
= 14A
V
GS
= 10V, R
GS
= 6.2
-
-
-
-
-
-
-
8
37
60
24
-
68
-
-
-
-
126
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 15A
I
SD
= 2.1A
I
SD
= 15A, dI
SD
/dt = 100A/
μ
s
I
SD
= 15A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
29
15
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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| FDS8896_07 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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| FDS89161LZ | 功能描述:MOSFET PT5 100V Logic Level with Zener RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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