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參數資料
型號: FDT461N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET
中文描述: 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數: 4/10頁
文件大小: 267K
代理商: FDT461N
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
0.01
0.1
1
1
10
120
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
0
0.4
0.8
1.2
1.6
1.5
2.0
2.5
3.0
3.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0.4
0.8
1.2
1.6
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 3V
V
GS
= 4.5V
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
9
10
I
D
= 0.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 0.54A
r
D
,
O
)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 0.54A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
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