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參數資料
| 型號： | FDU8876 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | IPAK-3 |
| 文件頁數： | 10/11頁 |
| 文件大?。?/td> | 272K |
| 代理商： | FDU8876 |
2004 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev. A2
F
PSPICE Thermal Model
REV 23 January 2004
FDD8876T
CTHERM1 TH 6 7e-4
CTHERM2 6 5 9e-4
CTHERM3 5 4 2e-3
CTHERM4 4 3 2.5e-3
CTHERM5 3 2 6e-3
CTHERM6 2 TL 1.1e-2
RTHERM1 TH 6 7.0e-2
RTHERM2 6 5 1.1e-1
RTHERM3 5 4 2.2e-1
RTHERM4 4 3 3.2e-1
RTHERM5 3 2 4.9e-1
RTHERM6 2 TL 5e-1
SABER Thermal Model
SABER thermal model FDD8876T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =7e-4
ctherm.ctherm2 6 5 =9e-4
ctherm.ctherm3 5 4 =2e-3
ctherm.ctherm4 4 3 =2.5e-3
ctherm.ctherm5 3 2 =6e-3
ctherm.ctherm6 2 tl =1.1e-2
rtherm.rtherm1 th 6 =7.0e-2
rtherm.rtherm2 6 5 =1.1e-1
rtherm.rtherm3 5 4 =2.2e-1
rtherm.rtherm4 4 3 =3.2e-1
rtherm.rtherm5 3 2 =4.9e-1
rtherm.rtherm6 2 tl =5e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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PDF描述 |
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| FDD8876 | N-Channel PowerTrench MOSFET |
| FDU8878 | N-Channel PowerTrench MOSFET |
| FDD8878 | N-Channel PowerTrench MOSFET |
| FDU8880 | N-Channel PowerTrench MOSFET 30V, 58A, 10m |
| FDU8882 | N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDU8878 | 功能描述:MOSFET 30V N-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8878_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm |
| FDU8880 | 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8880_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDU8882 | 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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