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參數資料
| 型號： | FDU8880 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 30V, 58A, 10m |
| 中文描述： | 35 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 263K |
| 代理商： | FDU8880 |
2004 Fairchild Semiconductor Corporation
November 2004
FDU8880 Rev. B2
F
FDU8880
N-Channel PowerTrench
MOSFET
30V, 58A, 10m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 10m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 13m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
58
51
13
A
A
A
A
Figure 4
53
55
0.37
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-251
Thermal Resistance Junction to Ambient TO-251
Thermal Resistance Junction to Ambient TO-251, 1in
2
copper pad area
2.73
100
52
o
C/W
o
C/W
o
C/W
Device Marking
FDU8880
FDU8880
Device
FDU8880
Package
TO-251AA
TO-251AA
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
75 units
75 units
FDU8880_NL (Note 3)
D
G
S
G D S
I-PAK
(TO-251AA)
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PDF描述 |
|---|---|
| FDU8882 | N-Channel PowerTrench MOSFET |
| FDD8882 | N-Channel PowerTrench MOSFET |
| FDD8882_NL | N-Channel PowerTrench MOSFET |
| FDU8882_NL | N-Channel PowerTrench MOSFET |
| FDU8896 | N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDU8880_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDU8882 | 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8882_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDU8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8896_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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