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參數資料
| 型號： | FDD8882_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, DPAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 277K |
| 代理商： | FDD8882_NL |
2004 Fairchild Semiconductor Corporation
FDD8882/FDU8882 Rev. 1.0.0
November 2004
www.fairchildsemi.com
F
1
FDD8882 / FDU8882
N-Channel PowerTrench
MOSFET
30V, 55A, 11.5m
Features
!
r
DS(ON)
= 11.5m
, V
GS
= 10V, I
D
= 35A
!
r
DS(ON)
= 15m
, V
GS
= 4.5V, I
D
= 35A
!
High performance trench technology for extremely low
r
DS(ON)
!
Low gate charge
!
High power and current handling capability
Application
!
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
相關PDF資料 |
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|---|---|
| FDU8882_NL | N-Channel PowerTrench MOSFET |
| FDU8896 | N-Channel PowerTrench MOSFET |
| FDD8896 | N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8896_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8896_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
| FDD8896_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8896_G | 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel Power Trench MOSFET 30V,94A, 5.7m |
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