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參數(shù)資料
| 型號： | FDU8882_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, IPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 277K |
| 代理商： | FDU8882_NL |
2004 Fairchild Semiconductor Corporation
FDD8882/FDU8882 Rev. 1.0.0
November 2004
www.fairchildsemi.com
F
1
FDD8882 / FDU8882
N-Channel PowerTrench
MOSFET
30V, 55A, 11.5m
Features
!
r
DS(ON)
= 11.5m
, V
GS
= 10V, I
D
= 35A
!
r
DS(ON)
= 15m
, V
GS
= 4.5V, I
D
= 35A
!
High performance trench technology for extremely low
r
DS(ON)
!
Low gate charge
!
High power and current handling capability
Application
!
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
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| FDU8896 | N-Channel PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDU8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8896_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDU8896_Q | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDUE0630-H-R24M=P3 | 制造商:TOKO Inc 功能描述: |
| FDUE0640 | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Fixed Inductors for Surface Mounting |
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