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參數(shù)資料
| 型號： | FDU8882_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | LEAD FREE, IPAK-3 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 277K |
| 代理商： | FDU8882_NL |
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
11
PSPICE Thermal Model
REV 23 October 2004
FDD8882T
CTHERM1 TH 6 5.6e-4
CTHERM2 6 5 6.8e-4
CTHERM3 5 4 2.0e-3
CTHERM4 4 3 2.8e-3
CTHERM5 3 2 5.7e-3
CTHERM6 2 TL 5.8e-3
RTHERM1 TH 6 5.3e-2
RTHERM2 6 5 2.2e-1
RTHERM3 5 4 2.9e-1
RTHERM4 4 3 3.9e-1
RTHERM5 3 2 6.0e-1
RTHERM6 2 TL 6.6e-1
SABER Thermal Model
SABER thermal model FDD8882T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =5.6e-4
ctherm.ctherm2 6 5 =6.8e-4
ctherm.ctherm3 5 4 =2.0e-3
ctherm.ctherm4 4 3 =2.8e-3
ctherm.ctherm5 3 2 =5.7e-3
ctherm.ctherm6 2 tl =5.8e-3
rtherm.rtherm1 th 6 =5.3e-2
rtherm.rtherm2 6 5 =2.2e-1
rtherm.rtherm3 5 4 =2.9e-1
rtherm.rtherm4 4 3 =3.9e-1
rtherm.rtherm5 3 2 =6.0e-1
rtherm.rtherm6 2 tl =6.6e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDU8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8896_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDU8896_Q | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDUE0630-H-R24M=P3 | 制造商:TOKO Inc 功能描述: |
| FDUE0640 | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Fixed Inductors for Surface Mounting |
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