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參數資料
| 型號： | FDW2509 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 共漏N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 124K |
| 代理商： | FDW2509 |
February 2003
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
2003 Fairchild Semiconductor Corporation
FDW2509NZ Rev B1 (W)
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
Features
7.1 A, 20 V. R
DS(ON)
= 20 m
@ V
GS
= 4.5 V
R
DS(ON)
= 26 m
@ V
GS
= 2.5 V
Extended V
GSS
range (
±
12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.1
30
1.6
1.1
–55 to +150
Units
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
2509NZ
FDW2509NZ
(Note 1a)
(Note 1b)
77
114
°
C/W
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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| FDW2509NZ | Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2510NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2511NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2512NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2512NZ_NL | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW2509NZ | 功能描述:MOSFET 2.5V N-Ch MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2510NZ | 功能描述:MOSFET 2.5V DUAL NCH SPEC PWR TRCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2511NZ | 功能描述:MOSFET 2.5V DUAL NCH SPECIFIED TRENC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2511NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench㈢ MOSFET |
| FDW2512NZ | 功能描述:MOSFET 2.5V TSSOP8 DUAL NCH SPECIFIED TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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