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參數資料
型號: FDW2512NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 6 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁數: 1/11頁
文件大小: 269K
代理商: FDW2512NZ
2004 Fairchild Semiconductor Corporation
FDW2512NZ Rev. A
December 2004
www.fairchildsemi.com
F
1
FDW2512NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
Features
!
6A, 20V r
DS(ON)
= 0.028
,
V
GS
= 4.5V
r
DS(ON)
= 0.036
,
V
GS
= 2.5V
!
Extended
V
GS
range (
±
12 V) for battery applications
!
HBM ESD Protection Level of 3.5kV Typical (note 3)
!
High performance trench technology for extremely low
r
DS(ON)
!
Low profile TSSOP-8 package
Applications
!
Load switch
!
Battery charge
!
Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
TSSOP-8
D1
G1
S1
D2
G2
S2
S2
D2
G2
S2
G1
S1
S1
D1
Pin 1
相關PDF資料
PDF描述
FDW2512NZ_NL Dual N-Channel 2.5V Specified PowerTrench MOSFET
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相關代理商/技術參數
參數描述
FDW2512NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2515N 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2515NZ 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2516NZ 功能描述:MOSFET Common Drain N-Channel 2.5V Specified PowerTrench ® MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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