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參數資料
| 型號： | FDW2515N |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Common Drain N-Channel 2.5V specified PowerTrench MOSFET |
| 中文描述： | 共漏N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數： | 1/6頁 |
| 文件大小： | 119K |
| 代理商： | FDW2515N |
February 2003
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
2003 Fairchild Semiconductor Corporation
FDW2515NZ Rev C
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
Features
5.8 A, 20 V
R
DS(ON)
= 28 m
@ V
GS
= 4.5 V
R
DS(ON)
= 38 m
@ V
GS
= 2.5 V
Extended V
GSS
range (
±
12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
5.8
20
1.6
1.1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2515NZ
FDW2515NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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PDF描述 |
|---|---|
| FDW2515NZ | CAP CER 68000PF 100V 10% X7R1210 |
| FDW2516NZ | Common Drain N-Channel 2.5V specified PowerTrench MOSFET |
| FDW2520 | 12 AMP MINIATURE POWER RELAY |
| FDW2520C | CAP CER 82000PF 100V 10% X7R1210 |
| FDW2521C | Complementary PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW2515NZ | 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2516NZ | 功能描述:MOSFET Common Drain N-Channel 2.5V Specified PowerTrench ® MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2520 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET |
| FDW2520C | 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2520C | 制造商:Fairchild Semiconductor Corporation 功能描述:TSSOP-8 COMPLEMENTARY NCH 20V 300AGA |
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