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參數資料
| 型號： | FDW2520C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 82000PF 100V 10% X7R1210 |
| 中文描述： | 6000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 124K |
| 代理商： | FDW2520C |
November 2000
2000 Fairchild Semiconductor Corporation
FDW2520C Rev C(W)
FDW2520C
Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC conversion
Power management
Load switch
Features
Q1: N-Channel
6 A, 20 V. R
DS(ON)
= 18 m
@ V
GS
= 4.5 V
R
DS(ON)
= 28 m
@ V
GS
= 2.5 V
Q2: P-Channel
–4.4A, 20 V. R
DS(ON)
= 35 m
@ V
GS
= –4.5 V
R
DS(ON)
= 57 m
@ V
GS
= –2.5 V
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
20
±
12
6
30
–20
±
12
–4.4
–30
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation
(Note 1a)
1.0
0.6
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2520C
FDW2520C
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW2520C | 制造商:Fairchild Semiconductor Corporation 功能描述:TSSOP-8 COMPLEMENTARY NCH 20V 300AGA |
| FDW2520C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDW2520C_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET |
| FDW2520C_Q | 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2521C | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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